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| HA22040 GaAs MMIC Down Converter for Micro Wave Application ADE-207-318(Z) 1st. Edition December 1999 Features * * * * * Suitable for down converter of Micro Wave Application(1.5 GHz) Low voltage and low current operation (2.7V, 6mA typ.) High conversion gain (10.5 dB typ. @1489MHz) Low 3rd-order intercept point (IP3in=-0.5dBm typ, @1489MHz) Small surface mount package (MPAK-6) Outline MPAK-6 This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. CAUTION This product ues GaAs. Since dust or fume of As,which is a component of GaAs, is highly poisonous to human body, please do not treat them mechanically in the manner which might expose to the Aer. And it should never be thrown out with general industrial or domestic wastes. HA22040 Absolute Maximum Ratings (Ta = 25C) Item Supply voltage Maximum current Power dissipation Channel temperature Storage temperature Operation temperature Maximum input power Symbol Vdd Idd Pd Tch Tstg Topr Pin max Ratings 5 15 100 150 -55 to +125 -20 to +70 +15 Unit V mA mW C C C dBm Electrical Characteristics (Ta = 25C, Vdd = 2.7V) Item Quiescent current Conversion gain Symbol Idd CG Min 3.5 8.5 Typ 6 10.5 Max 8.5 12.5 Unit mA dB Test Conditions No signal f=1489MHz, fLo=1619MHz, PLo=-12dBm, IF=130MHz, Pin=-30dBm f=1489MHz,fLo=1619MHz, PLo=-12dBm,IF=130MHz Noise figure NF -- 4.5 6 dB Typical Performance (Ta = 25C, Vdd = 2.7V) Item VSWR (input) 3rd order intercept point Symbol VSWR in IP3in Typ 1.5 -0.5 Unit -- dBm Test Conditions f = 1.489 GHz f = 1.489 GHz, fud =1.490 Ghz, Pin=-30dBm,fLo=1.619GHz, PLo=-12dBm 2 HA22040 Pin Arrangement Mark type : GH Yearly code : a to d Monthly code : e to h 1 6 GH Top View d e 2 f g h 3 a b c d 4 5 Yearly code Year 1999 2000 2001 2002 a Mark b c Monthly code Month January February March April May June July August September October November December e Mark f g h Pin No. 1 2 3 4 5 6 Pin name IF out Cs RF in Vdd GND Lo in Function IF output Bypath capacitor RF input Voltage supply Ground Local input 3 HA22040 Block Diagram 5.6nH Vdd 2200pF Cs 5 2 330nH 180nH 4 3 1pF RF in 2200pF 20pF IFout 8pF Vdd 2200pF Lo in 1.5pF 3.3nH 6 1 4 HA22040 Main Characteristics Output power,3rd Order Intermodulation Distortion vs.Input power 20 Vdd=2.7V Ta=+25C RF=1489MHz Lo=1619MHz,-12dBm Pout -20 im3 9 8 Current vs. Input Power Vdd=2.7V Ta=+25C RF=1489MHz Lo=1619MHz,-12dBm Output Power Pout (dBm) 0 Current Idd (mA) 7 6 5 4 3 -40 -60 -80 -60 -50 -40 -30 -20 -10 0 10 -60 -50 -40 -30 -20 -10 0 10 Input Power Pin (dBm) Input Power Pin (dBm) Conversion Gain CG (dB) 3rd order Intercept Point(input) IP3in (dBm) Conversion Gain,3rd Order intercept Point vs. Local Power 15 Vdd=2.7V,Ta=+25C RF=1489MHz,-30dBm Lo=1619MHz CG Noise Figure,Current vs. Local Power 9 Vdd=2.7V,Ta=+25C RF=1489MHz Lo=1619MHz 10 Noise Figure NF (dB) Current Idd (mA) 8 7 6 5 5 IP3in 0 Idd NF 4 3 -5 -10 -30 -25 -20 -15 -10 -5 0 5 -30 -25 -20 -15 -10 -5 0 5 Local Power PLo (dBm) Local Power PLo (dBm) 5 HA22040 Conversion Gain CG (dB) 3rd Order Intercept Point(input) IP3in (dBm) Conversion Gain,3rd Order Intercept Point vs. Frequency 15 Vdd=2.7V,Ta=+25C RF=-30dBm Lo=-12dBm(IF=130MHz) 9 CG Noise Figure,Current vs. Frequency Vdd=2.7V Ta=+25C Lo=-12dBm(IF=130MHz) 10 Noise Figure NF (dB) Current Idd (mA) 8 7 Idd 6 5 4 3 1475 1480 1485 1490 1495 1500 1505 NF 5 IP3in 0 -5 1475 1480 1485 1490 1495 1500 1505 Frequency RF (MHz) Frequency RF (MHz) VSWR(RF) vs. Frequency 3 Vdd=2.7V Ta=+25C Lo=1619MHz,-12dBm 3 VSWR(Lo) vs. Frequency Vdd=2.7V Ta=+25C 2.5 2.5 VSWRlo Frequency RF (MHz) VSWRrf 2 2 1.5 1.5 1 1475 1480 1485 1490 1495 1500 1505 1 1605 1610 1615 1620 1625 1630 1635 Local Frequency Lo (MHz) 6 HA22040 Conversion Gain CG (dB) 3rd Order Interceptpoint(input) IP3in (dBm) Conversion Gain, 3rd Order Intercept Point vs. Supply Voltage 15 Ta=+25C RF=1489MHz,-30dBm Lo=1619MHz,-12dBm CG Noise Figure, Current vs. Supply Voltage 9 Ta=+25C RF=1489MHz Lo=1619MHz,-12dBm 10 Noise Figure NF (dB) Current Idd (mA) 8 7 Idd 6 5 4 3 2.25 NF 5 IP3in 0 -5 2.25 2.5 2.75 3 3.25 3.5 2.5 2.75 3 3.25 3.5 Supply Voltage Vdd (V) Supply Voltage Vdd (V) VSWR(RF) vs. Supply Voltage 3 Ta=+25C RF=1489MHz,-30dBm Lo=1619MHz,-12dBm 3 VSWR(Lo) vs. Supply Voltage Ta=+25C Lo=1619MHz 2.5 2.5 VSWRlo VSWRrf 2 2 1.5 1.5 1 2.25 2.5 2.75 3 3.25 3.5 1 2.25 2.5 2.75 3 3.25 3.5 Supply Voltage Vdd (V) Supply Voltage Vdd (V) 7 HA22040 Conversion Gain CG (dB) 3rd Order Intercept point(input) IP3in (dBm) Conversion Gain, 3rd order Intercept Point vs. Ambient Temperature 15 CG 10 Vdd=2.7V RF=1489MHz,-30dBm Lo=1619MHz,-12dBm 9 Noise Figure, Current vs. Ambient Temperature Vdd=2.7V RF=1489MHz Lo=1619MHz,-12dBm Noise Figure NF (dB) Current Idd (mA) 8 7 6 5 4 3 Idd 5 IP3in 0 NF -5 -25 0 25 50 75 -25 0 25 50 75 Ambient Temperature Ta (C) Ambient Temperature Ta (C) VSWR(RF) vs. Ambient Temperature 3 Vdd=2.7V RF=1489MHz Lo=1619MHz,-12dBm 3 VSWR(Lo) vs. Ambient Temperature Vdd=2.7V Lo=1619MHz 2.5 2.5 2 VSWRlo -25 50 VSWRrf 2 1.5 1.5 1 0 25 75 1 -25 0 25 50 75 Ambient Temperature Ta (C) Ambient Temperature Ta (C) 8 HA22040 Package Dimentions Unit: mm 1.9 0.2 0.95 0.95 0.6 0.15 + 0.1 - 0.05 + 0.2 0.6 1.6 - 0.1 6 - 0.3 - 0.05 2.9 0.2 0.3 + 0.1 + 0.2 1.1 - 0.1 2.8 + 0.2 - 0.3 0 - 0.1 Hitachi Code JEDEC EIAJ Weight (reference value) MPAK-6 -- -- 0.014 g 9 HA22040 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. 1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning. If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then consult a physician without delay. 2. Disposal of this product must be handled, separately from other general refuse, by a specialist processing contractor in the same way as dangerous items. 10 HA22040 Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. 11 |
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